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锗片Ge wafer
公布工夫 : 2016-08-24 阅读次数 : 635

可按客户要求加工定制,各种规格尺寸的半导体级、太阳能级和光学级锗片。

产物尺寸除了尺度的2“  3”  4“ 6” ,还能够根据客户要求加工定制各种规格尺寸。

Size:  2"  3"  4" 6" or on customer' requirements

晶向(100) (111)(110)或按客户要求。

Direction: (100) (111)(110)or on customer' requirements

产物范例 n-type  / p-type /  Undope

Type:  n-type  / p-type /  Undope

外表:研磨、单抛、双抛

Surface: lapping,  single side polished, Double side polished

厚度: 150um~20mm

Thickness: 150um ~20mm

典范规格见下表

Semi-conducting Ge Specifications


Growth Method VGF
Dopant n-type: As;   p-type: Ga
Wafer Shape Round (DIA: 2" 4" 6")
Surface Orientation** (100)±0.5°

**Other Orientations maybe available upon request


Dopant As (n-type) Ga (p-type)
Resistivity  (Ω.cm) 0.05-0.25 0.005-0.04
Etch Pitch Density (cm2) ≤ 300 ≤ 300



Wafer Diameter (mm) 50.8±0.3 100±0.3
Thickness (µm) 175±25 175±25
TTV [P/P] (µm) ≤ 15 ≤ 15
WARP (µm) ≤ 25 ≤ 25
IF* (mm) 17±1 32.5±1
OF (mm) 7±1 18±1
Polish** E/E, P/E, P/G E/E, P/E, P/G
Backside Ra (µm)*** < 0.1 < 0.1

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